Kuvaus
Tekbox TBMDA-BCI25 Moduloitu laajakaistainen tehovahvistin
Moduloitu TBMDA-BCI25-vahvistin tarjoaa tarvittavan kaistanleveyden ja modulaation suoritettua häiriönsietotestausta varten käyttämällä ISO 11452-4 -standardin mukaisia BCI-antureita taajuusalueella 1 MHz – 400 MHz. Se on suunniteltu käytettäväksi signaaligeneraattoreiden tai spektrianalysaattoreiden seurantageneraattoreiden avulla.
The TBMDA-BCI25 modulated amplifier provides the necessary bandwidth and modulation for conducted immunity testing using BCI probes per ISO 11452-4 in the frequency range from 1 MHz to 400 MHz. It is designed to be driven by signal generators or by tracking generators of spectrum analyzers. With a 1 dB compression point of up to 30 W in the frequency range 1 MHz to 400 MHz it can generate test levels up to 400mA. A built in AM / PM – modulator enables use of tracking generators as signal source. The TBMDA-BCI25 has sufficient gain to achieve maximum output power with 0 dBm provided by a spectrum analyzer tracking generator.
Besides 1 kHz, 80% AM, the TBMDA-BCI25 provides built in modulation capability to generate 1 kHz, 50% duty cycle PM signals. In PM mode, the TBMDA-BCI25 can also generate a 217 Hz Signal with 12.5% duty cycle in order to simulate mobile phone TDMA noise.
Features
- CW amplifier (modulation off)
- 1 kHz, 80% AM modulation
- 1 kHz, 50% duty cycle pulse modulation
- 217 Hz, 12.5% duty cycle pulse modulation
Specifications
- Input / Output: 50 Ohm, N female
- Supply Voltage range: 110 V…240 V
- Supply power consumption: 108 W @ 220V
- Operating temperature range: -20°C to 50°C
- Frequency range: 1 MHz – 400 MHz
- Small signal gain: 47 dB typ.
- Gain flatness 1 MHz – 400 MHz / Pin = -3 dBm: 1.5 dB typ.
- Saturated output power @ 1 MHz / Pin = 0 dBm: 45.1 dBm (32.2 W) typ.
- Saturated output power @ 10 MHz / Pin = 0 dBm: 45.2 dBm (33 W) typ.
- Saturated output power @ 50 MHz / Pin = 0 dBm: 45.9 dBm (38.6 W) typ.
- Saturated output power @ 100 MHz / Pin = 0 dBm: 45.7 dBm (37.5 W) typ.
- Saturated output power @ 150 MHz / Pin = 0 dBm: 46.2 dBm (41.2 W) typ.
- Saturated output power @ 200 MHz / Pin = 0 dBm: 45.6 dBm (36.1 W) typ.
- Saturated output power @ 250 MHz / Pin = 0 dBm: 46.3 dBm (42.5 W) typ.
- Saturated output power @ 300 MHz / Pin = 0 dBm: 46 dBm (39.7 W) typ.
- Saturated output power @ 350 MHz / Pin = 0 dBm: 45.8 dBm (37.8 W) typ.
- Saturated output power @ 400 MHz / Pin = 0 dBm: 45 dBm (31.6 W) typ.
- 1dB output compression point @ 1 MHz: 44.1 dBm typ. (Pin: -4 dBm)
- 1dB output compression point @ 10 MHz: 44.6 dBm typ. (Pin: -3 dBm)
- 1dB output compression point @ 50 MHz: 45.3 dBm typ. (Pin: -2 dBm)
- 1dB output compression point @ 100 MHz: 45.2 dBm typ. (Pin: -1 dBm)
- 1dB output compression point @ 150 MHz: 45.2 dBm typ. (Pin: -2 dBm)
- 1dB output compression point @ 200 MHz: 45.2 dBm typ. (Pin: -1 dBm)
- 1dB output compression point @ 250 MHz: 45.6 dBm typ. (Pin: -2 dBm)
- 1dB output compression point @ 300 MHz: 45.1 dBm typ. (Pin: -2 dBm)
- 1dB output compression point @ 350 MHz: 44.8 dBm typ. (Pin: -2 dBm)
- 1dB output compression point @ 400 MHz: 43.6 dBm typ. (Pin: -4 dBm)
- 2 nd harmonic, 100 MHz, Pout = 45.7 dBm: < – 23 dBc typ.
- 2 nd harmonic, 100 MHz, Pout = 40 dBm: < – 29 dBc typ.
- 3 rd harmonic, 100 MHz, Pout = 45.7 dBm: < – 12 dBc typ.
- 3 rd harmonic, 100 MHz, Pout = 40 dBm: < – 19 dBc typ.
Application:
- General-purpose wideband RF power amplifier
- Wideband RF power amplifier for conducted immunity testing driving BCI-probes
- Wideband RF power amplifier for radiated immunity testing, driving near field probes
- Wideband RF power amplifier for radiated immunity testing, driving TEM Cells
